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IRF150
IR / INFINEON

MOSFET , N-CHANNEL

4,40 €
Manufacturer: Infineon
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-204AE-2
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 38 A
Rds On - Drain-Source Resistance: 65 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Channel Mode: Enhancement
Brand: Infineon / IR  
Configuration: Single  
Fall Time: 130 ns  
Height: 7.74 mm  
Length: 39.37 mm  
Pd - Power Dissipation: 150 W  
Rise Time: 190 ns  
Transistor Type: 1 N-Channel  
Typical Turn-Off Delay Time: 170 ns  
Typical Turn-On Delay Time: 35 ns  
Width: 25.53 mm
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